Influence of Interface Traps on MOSFET thermal coefficients and its effects on the ZTC current

GARCÍA COZZI, R.; REDÍN, E.; GARCIA-INZA, M.; SAMBUCO SALOMONE, L.; FAIGÓN, A.; CARBONETTO, S.

MICROELECTRONICS RELIABILITY

PERGAMON-ELSEVIER SCIENCE LTD

Año: 2022 vol. 137

0026-2714

Interface degradation-induced shifts of MOSFET thermal coefficients and zero temperature coefficient current(𝐼𝑍𝑇 𝐶 ) were studied by monitoring the interface traps (𝑁𝑖𝑡 ) growth in a thick oxide n-channel MOSFET due toexposure to ionizing radiation, and to further annealing at room temperature. A new physics-based compactmodel was proposed to account for the observed results, and to predict the evolution of these parameters asinterface traps are generated during stress. Within a range (0–40◦ C) around room temperature, both the inverseof the mobility and the threshold voltage thermal coefficient varied roughly linear with 𝑁𝑖𝑡 , with relativevariations of 5.2 × 10−13 eV cm2 and −9.33 × 10−13 eV cm2 , respectively. Furthermore, the dependence for 𝐼𝑍𝑇 𝐶with 𝑁𝑖𝑡 can also be approximated to a linear expression, with a relative increment of 1.94 × 10−12 eV cm2 . Theimplications for temperature error mitigation in MOS sensors were discussed.