INVESTIGADORES
CARBONETTO SebastiÁn Horacio
artículos
Título:
Numerical modeling of radiation-induced charge loss in CMOS floating gate cells
Autor/es:
SAMBUCO SALOMONE, L.; GARCIA-INZA, M.; CARBONETTO, S.; FAIGON, A.
Revista:
Elektron
Editorial:
FIUBA
Referencias:
Lugar: Buenos Aires; Año: 2021 vol. 5 p. 100 - 104
ISSN:
2525-0159
Resumen:
The radiation response of programmed/erased floating gate cells is studied by numerical simulations through a recently developed physics-based numerical model. The role played by oxide trapped charge in the overall threshold voltage shift with dose is properly evaluated by varying the capture rate of radiation-generated holes. A simplified analytical model is considered, and its limitations are discussed.
