Influence of the light-induced degradation on the extended state mobility in hydrogenated amorphous silicon

J. A. SCHMIDT; CUTRERA, M.; BUITRAGO, R.H.; ARCE, R. D.

APPLIED PHYSICS LETTERS

AMER INST PHYSICS

Lugar: New York; Año: 1996 vol. 69 p. 4047 - 4049

0003-6951

We measured the effects of light soaking on the extended state electron mobility in intrinsic and n-type doped hydrogenated amorphous silicon samples. We obtained the temperature dependence of the mobility in the range 0–80 °C, using a recently proposed method (Dawson et al., Appl. Phys. Lett. 63, 955 (1993)). We found a decrease of the mobility as the degree of light-induced degradation increased. We suggest that these changes in the extended state transport are caused by an enhancement in the magnitude of the potential fluctuations introduced by the extra created charged defects.