INVESTIGADORES
ARCE roberto Delio
artículos
Título:
Kinetics of the photoinduced evolution of the nanostructured porous silicon photoluminescence.
Autor/es:
R. KOROPECKI; R. D. ARCE; A. M. GENNARO; C. SPIES; J. A. SCHMIDT
Revista:
JOURNAL OF NON-CRYSTALLINE SOLIDS
Editorial:
Elsevier
Referencias:
Lugar: Amsterdam; Año: 2006 p. 1163 - 1166
ISSN:
0022-3093
Resumen:
In this work we show that the illumination level used during porous silicon preparation is a key factor determining the subsequent photoinduced evolution of the photoluminescence spectra. The post-preparation evolution results from the combination of at least two effects. One of them is ruled by the size changes of the silicon nanostructure due to photo-oxidation, and dominates for samples prepared under low illumination levels. On the other hand, for samples prepared under high illumination levels the post-preparation evolution is dominated by a quenching effect, resulting from photoinduced dangling bonds generation in the hydrogen-rich surface of the nanostructure. The kinetics of dangling bond creation is similar to that found in the Staebler?Wronski effect for hydrogenated amorphous silicon. 2006 Elsevier B.V. All rights reserved.2006 Elsevier B.V. All rights reserved.
