Initial growth stages of AlF3 on Cu(100): an STM study

M.C.G. PASSEGGI (JR.); J.C. MORENO-LÓPEZ; G. RUANO; R.A. VIDAL; J. FERRÓN

Barcelona, España

Conferencia; TNT2009, 10th “Trends in Nanotechnology” International Conference; 2009

Phantoms Foundation

In this study we present results concerning the early growth stages of an insulator-metal interface by means of scanning tunnelling microscopy. In particular, we report the growth of aluminium fluoride (AlF3) islands over a Cu(100) surface at room temperature, from submonolayercoverages up to 1.25 monolayers. These islands cover the substrate with a single monolayer film up to depositions of 0.80 monolayers, with 3D growth beyond this coverage. High voltages (V> 2.50 V) are needed to obtain STM images, showing the insulator character of the AlF3 islands. Important modifications are observed in the AlF3/Cu(100) surface after an annealingtreatment.