INVESTIGADORES
VIDAL ricardo Alberto
artículos
Título:
Ion mixing and backscattering effect in AES depth profiling
Autor/es:
FERRÓN, J.; VIDAL, R.
Revista:
APPLIED SURFACE SCIENCE
Editorial:
ELSEVIER SCIENCE BV
Referencias:
Año: 1986 vol. 27 p. 329 - 337
ISSN:
0169-4332
Resumen:
By combining Auger electron spectroscopy and 2 keV Ar+ ion bombardment we have obtained the depth profile of a Si-Ta interface. We have also simulated this depth profile through a Monte Carlo calculation. Through comparison between experimental results and the calculation we studied the Auger matrix and interface broadening effects on AES depth profiles. We found that the backscattering effect strongly depends on the impinging electron angle and energy. © 1986.
