Electrical, Photoelectrical and Morphological Properties of ZnO Nanowire Networks

VEGA, NADIA CELESTE; TIRADO, MONICA CECILIA; COMEDI, DAVID; RODRIGUEZ,A; G. HUGHES5,

Congreso; NANOMAT 2012.; 2012

In this work we studied ZnO nanowire network (ZnO NWN) samples fabricated on either Si or (100) Si wafers covered with Si NWs synthesized through Low Pressure Chemical Vapour Deposition (LPCVD) using Si2H6 as precursor gas. First, the substrates are covered with amorphous layers of SiO2 grown by thermal oxidation where Au nanoclusters are deposited to promote NW growth. The ZnO NWN are grown by vapour-transport technique, in a pumped quartz tube furnace. SEM images determined the morphology of the nanostructure obtained. Photoluminescence, electrical conductance and photoconductance of ZnO NWN grown on SiO2 substrate are also studied. The photoluminescence spectrum shows peaks due to exciton recombination and lattice defects. The ZnO NWN presents quasi-persistent photoconductivity effects and I-V characteristics with hysteretic behaviour, opening a new field for applications, sensors and solar cells [1-3].