QUANTUM INTERFERENCE EFFECTS IN POROUS SILICON

PUSEP, Y.A.; RODRIGUES, A.D.; BORRERO-GONZALES, LUIS; ACQUAROLI, L.N.; URTEAGA, R; ARCE, ROBERTO; KOROPECKI, ROBERTO; TIRADO, MONICA; COMEDI, DAVID

Málaga

Conferencia; 8th International Conference Porous Semiconductors Science and Technology: PSST-2012; 2012

Surprisingly, the Fano resonance caused by the interference of continuum electron excitations with the longitudinal optical phonons was found in random porous Si by Raman scattering. The analysis of the experimental data shows that the electron states trapped at the Si-SiO₂ interface dominate in the observed Raman scattering. The gap energy associated with these interface states was determined.