Poster: Growth of periodically rippled graphene on Ru(0001)

PASSEGGI (JR.), M.C.G.; LOPEZ VAZQUEZ DE PARGA, A.; CALLEJA, F.; BORCA, B.; HINAREJOS, J.J.; GUINEA, F.; MIRANDA, R.

Miramare-Trieste, Italy, 25 - 29 August

Conferencia; ICTP Conference - Graphene Week 2008 - Electronic Properties of Graphene-Based Nanostructures; 2008

Abdus Salam International Centre for Theoretical Physics (ICTP)

In this work we report on a method to fabricate highly perfect, periodically rippled graphene monolayers and islands on Ru(0001) under ultrahigh vacuum conditions. We characterized by means of scanning tunnelling microscopy or spectroscopy (STM/STS) the perfection at the atomic scale and the local electronic structure of the rippled graphene monolayer. The periodicity of the ripples is dictated by the difference in lattice parameters of graphene and substrate, and, thus, it is adjustable. We observe inhomogeneities in the charge distribution, i.e., electron pockets, at the higher parts of the ripples. The graphene nanoislands display a hexagonal shape with atomically resolved zigzag edges, whose characteristic edge states allows us to determine experimentally the doping of the graphene layer. Expuso: PASSEGGI (Jr.), M.C.G.