Hyperfine Interaction in the Cubic Semiconductor CdO

J. DESIMONI; A.G. BIBILONI; C.P. MASSOLO; M. RENTERÍA

PHYSICAL REVIEW B - CONDENSED MATTER AND MATERIALS PHYSICS

American Physical Society

Lugar: Ridge, NY; Año: 1990 vol. 41 p. 1443 - 1446

0163-1829

The time-differential perturbed angular correlation technique has been applied using In111 probes, which decay through electron capture to 111CdCd1, ,,,,to , study the hyperfine interaction in cubic cadmium oxide, in the temperature range RT-740 °C (RT denotes room temperature). The main fraction of probes are located in perfect-lattice sites, with null electric field gradient in agreement with crystalline-structure considerations. Around 25% of the total intensity shows an electric-field-gradient distribution around Vzzzz=0. This corresponds to probes located in sites perturbed by the vicinity of oxygen vacancies in the lattice. The temperature-independent behavior of the measured hyperfine parameters is discussed in terms of conductivity and band-structure properties of the semiconductor. No time-dependent interaction arising from nuclear electron-capture aftereffects are seen in this experiment. This is in agreement with a previously reported model of aftereffect processes which states that only holes trapped in impurity levels inside the band gap of the semiconductor can give rise to detectable fluctuating interactions.