INVESTIGADORES
RENTERIA Mario
artículos
Título:
Experimental and ab initio study of Ta-doped ZnO semiconductor
Autor/es:
E. L. MUÑOZ; D. RICHARD; P.D. EVERSHEIM; M. RENTERÍA
Revista:
HYPERFINE INTERACTIONS
Editorial:
Springer
Referencias:
Lugar: Dordrecht; Año: 2010 vol. 197 p. 181 - 186
ISSN:
0304-3843
Resumen:
In this work, we present γ-γ Perturbed-Angular-Correlation results inpolycrystalline ZnO semiconductor implanted with 181Hf(->181Ta) probes. Calculations in Ta-doped ZnO were carried out using the Full-Potential Augmented Plane Wave plus local orbital method in a supercell and varying self-consistently the charge state of the impurity. Ta is a triple donor impurity with respect to Zn2+ in ZnO and thus it can loose 1, 2 or 3 donor electrons under certain circumstances. As expected, the comparison between the experimental Electric-Field-Gradient tensor results and our ab initio predictions shows that the Ta impurity is in an ionized charge state at room temperature.
