Magnetic behavior of Mn, Al doped ZnO thin films obtained by PLD

M. G. FURLANI; C. I. ZANDALAZINI; A. J. MORENO; M. I. OLIVA; G. PUNTE

Buenos Aires

Workshop; X Latin American Workshop on Magnetism, Magnetic Materials and Their Applications; 2013

Diferent thin films of diluted magnetic semiconductors, nanostructured zinc oxide-based materials were grown by PLD and deposited on a SiN substrate (Si)/SiO2/Nitrilo). The processed samples from ceramic targets of diferent compositions, Zn1-x-yAlxMnyO, contain an equal concentration of aluminium, 3 % in weight, because it optimizes the value of resistivity of semiconductor and diferent concentrations of manganese. The samples were characterized by x-ray difraction. The chemical identification of the films constituents and their stoichiometry was obtained by ESCA electron spectroscopy and Auger spectroscopy, while the magnetic properties were explored through a MPMS-SQUID magnetometer. The XRD results enabled to determine the presence in all materials of zinc oxide with wurtzite crystal structure. In addition, several manganese oxides were identified in powders samples, while the presence of zinc oxide (wurtzite) only was detected in thin films, with preferential growth in the c direction perpendicular to the substrate. Determinations that were conducted show that the stoichiometry of the surface maintains the stoichiometry of the target from which comes from. All films showed ferromagnetic behavior, even the one deposited without magnetic dopant, but the value of the saturation magnetization varies with the dopant concentration.