Single layers of BTO-BaM composites grown by PLD

M. I. OLIVA; C. I. ZANDALAZINI; J. C. FERRERO

Buenos Aires

Workshop; X Latin American Workshop on Magnetism, Magnetic Materials and Their Applications; 2013

Barium titanate (BTO) and barium hexaferrite (BaM) with ferroelectric-piezoelectric and ferrimagnetic-magnetostrictive brehavior respectively, are two materials very studied in the last decades for their widely well-known individual technological applications \cite{Li08,Nan09}. Recently had arisen an increasing scientific interest about multiferroic composites, which incorporate both ferroelectric and ferri-/ferromagnetic phases, typically yield giant magnetoelectric coupling response above room temperature, which makes them ready for technological applications. Studies of magnetoelectric properties in BTO and BaM composites (bulk) were recently reported \cite{Sri09}, positioning them as excellent artificial multiferroics. In this work we present the growth of two-phase layers of BTO-BaM deposited by PLD on (0001)$Al_{2}O_{3}$ substrate from targets with different concentrations of BTO (75, 50, 25, 15 and 0\% of BTO). By x-ray diffractometry (XRD), both phases policrystalline was observed in each one of the targets, while in the deposits a textured growth was observed, a preferential orientation for the majority phase in each sample, i.e. the deposits carried out from target rich in BaM present a preferential growth in planes {00l}, while a concentration smaller of BaM (target rich in BTO) it favors a preferential orientation of the BTO in the (111) plane. The magnetic characterization was carried out using a SQUID magnetometer considering different temperatures and applied fields. A strong influence of the phase BTO was observed on the magnetic behavior of BaM, rich layers in BTO present a bigger coercive field, indicating the effects of the inclusion of non magnetic material on the interactions ($Fe^{3+}-O^{-2}-Ti^{4+}$), in total agreement with report in bulk configuration \cite{Sri09}. Besides, the curves of irreversible susceptibility show two reversion modes of the moments only in the samples with low percentage of BTO. Our work is a preliminary study of the BTO-BaM compound in the thin films configuration as a significant technological promise in the novel multifunctional devices.\\ \begin{thebibliography}{XX} \bibitem{Li08} Y. Li, Y. Liu, H. Zhang, L. Han, J. Appl. Phys. 105 07A745 (2009). \bibitem{Nan09} C. Nan, M. Bichurin, S. Dong, G. Srinivasan, J. Appl. Phys. 103, 031101 (2008). \bibitem{Sri09} A. Srinivas, R. Gopalan, V. Chandrasekharan, Solid State Comm. 149 (2009) 367-370.