Hall effect of La0.6Sr0.4MnO3 thin films

M.GRANADA, B. MAIOROV, M.SIRENA, L.B. STEREN, J. GUIMPEL

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS

Elsevier

Lugar: Amsterdam; Año: 2004 vol. 272 p. 1836 - 1838

0304-8853

We studied the temperature and thickness dependence of the transport properties of La0.6 Sr0.4 MnO3 .lms.Hall voltage and magnetoresistance measurements on 10 and 150 nm thick .lms were performed with this porpose.From the ordinary Hall component,we calculated the density of carriers,which has hole-character and is systematically lower than that expected from the chemical composition of the manganite in both samples.Localization effects observed at low temperature in the resistivity of the thinner .lm,associated with the substrate-induced disorder,are correlated with a decrease of the density of carriers.a0.6 Sr0.4 MnO3 .lms.Hall voltage and magnetoresistance measurements on 10 and 150 nm thick .lms were performed with this porpose.From the ordinary Hall component,we calculated the density of carriers,which has hole-character and is systematically lower than that expected from the chemical composition of the manganite in both samples.Localization effects observed at low temperature in the resistivity of the thinner .lm,associated with the substrate-induced disorder,are correlated with a decrease of the density of carriers.