PERSONAL DE APOYO
BENVENUTO ariel Gaston
artículos
Título:
Characterization of thin polycrystalline silicon films deposited on glass by CVD
Autor/es:
A.G. BENVENUTO; R.H. BUITRAGO; A. BHADURI; C. LONGEAUD; J.A. SCHMIDT
Revista:
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Editorial:
IOP PUBLISHING LTD
Referencias:
Lugar: Londres; Año: 2012 vol. 27
ISSN:
0268-1242
Resumen:
We deposited polycrystalline silicon (poly-Si) thin films on commercial float glass bychemical vapour deposition from trichlorosilane at temperatures between 735 and 870 ºC.The structural properties of the films were evaluated by means of scanning electronmicroscopy, x-ray diffraction, atomic force microscopy, reflectance in the ultraviolet regionand Raman spectroscopy. The electrical characterization involved measurements of darkconductivity and photoconductivity as a function of temperature, Hall effect, ambipolardiffusion length from the steady-state photocarrier grating technique and density of defects bymeans of modulated photoconductivity. By using boron tribromide as a doping agent, degreesof doping ranging from intrinsic to clearly p-doped were obtained. The process, the reactantsand the substrate used are of low cost, and proved to be adequate for direct poly-Si deposition,giving films of good structural and electrical properties.
