SOLID PHASE EPITAXY ON LARGE GRAINED POLYCRYSTALLINE SEED LAYERS

R.H. BUITRAGO; J.A. SCHMIDT; N. BUDINI; G. RISSO; P. RINALDI; A.G. BENVENUTO; R.D. ARCE

EU PVSEC Proceedings

WIP Wirtschaft und Infrastruktur GmbH & Co Planungs KG

Lugar: Munich; Año: 2009 p. 2514 - 2516

In this paper we report preliminary results on the preparation of a polycrystalline silicon solar cellabsorber layer by epitaxial thickening on a large grained seed layer. The latter is obtained from an amorphous silicon double layer p+/p- prepared by PECVD and crystallized by Nickel mediated crystallization. Before the deposition of the p- absorber layer the Ni precipitated at the grain boundaries of the p+/p- layer has to be removed. Epitaxial growth is observed keeping the same plane orientation as the seed layer. Polycrystalline silicon thin films with grain size larger than 100 microns can be obtained by this procedure.