Three Phase Dual Active Bridges with Integrated Series Inductance using 10-kV SiC MOSFETs for Medium Voltage Grid Applications

RODERICK A. GOMEZ-JIMENEZ; DAVID PORRAS FERNANDEZ; GERMÁN G. OGGIER; JUAN C. BALDA; YUE ZHAO

Orlando, Florida

Congreso; 38th Annual IEEE Applied Power Electronics Conference and Exposition (APEC 2023); 2023

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

The advancement of high-blocking capacity silicon carbide (SiC) power modules enables the development of next-generation highly efficient and highly power-dense conversion units for medium voltage applications without implementing complex multilevel topologies. This paper presents the design and testing of a 150-kW medium-voltage (MV) three-phase dual active bridge (DAB) using 10-kV Wolfspeed SiC MOSFETs for MV AC and DC grid applications. The DAB is designed for an MV of 5 kVdc and a low voltage of 400 Vdc. A high efficiency, low parasitic capacitance 10-kHz three-limb three-phase transformer with integrated leakage inductance for rated power transfer is used to provide galvanic isolation. The proposed prototype was experimentally validated up to 45 kW with an input voltage of up to 4 kV. Experimental voltage and current waveforms are provided for each operating condition.