INVESTIGADORES
OGGIER German Gustavo
artículos
Título:
Semiconductors Faults Analysis in Dual Active Bridge DC-DC Converter
Autor/es:
ANDRÉS M. AIRABELLA; GERMÁN G. OGGIER; LAUREANO E. PIRIS BOTALLA; CRISTIAN A. FALCO; GUILLERMO O. GARCÍA
Revista:
IET Power Electronics
Editorial:
IET
Referencias:
Año: 2016
ISSN:
1755-4543
Resumen:
Failures in power semiconductors of a Dual Active Bridge (DAB) converter are characterized consideringopen-circuit faults in diodes and transistors. A detailed electrical waveforms analysis to identify the main symptoms of theconverter during normal and failure conditions is presented. Based on this analysis, a fault diagnosis strategy is proposedwhich is able to identify failures either in a diode or in a transistor as well as its location in the circuit. Finally, simulationand experimental results, using a prototype of 1 KW, are presented in this paper to demonstrate the practical feasibility ofthe theoretical proposal.
