New explicit current/voltage equation for p-i-n solar cells including interface potential drops and drift/diffusion transport

K. TARETTO

PROGRESS IN PHOTOVOLTAICS

JOHN WILEY & SONS LTD

Lugar: LOndres; Año: 2014 vol. 22 p. 870 - 884

1062-7995

Analytical modeling of p-i-n solar cells constitutes a practical tool to extractelectronic material and device parameters from fits to experimental data, and to establishoptimization criteria. This paper proposes a model for p-i-n solar cells based on a newapproximation, which estimates the electric field taking into account interface potentialdrops at the intrinsic-to-doped interfaces. This leads to a closed-form current/voltageequation that shows very good agreement with device simulations, revealing that theinclusion of the interface potential drops constitutes a major correction to the classicaluniform-field approach. Furthermore, the model is able to fit experimentalcurrent/voltage curves of efficient nc-Si and ;c-Si p-i-n solar cells under illumination andin the dark, obtaining material parameters such as mobility-lifetime product, built-involtage or surface recombination velocity.