Study of the Mott-Schottky equation in strongly pinned double Schottky barriers

F. SCHIPANI, M. A. PONCE, C. M. ALDAO

Florianópolis

Congreso; XI Encontro da SBPMat; 2012

Aloisio Nelmo Klein - Departamento de Ingeniería Mecánica de la Universidad Federal de Santa Catarina, FlorianóDepartamento de Física de la Universidad Federal de Santa Catarina, Florianópolis, Brasil

The capacitive behavior of an intergranular double Schottky barrier in a polycrystalline semiconductor is evaluated. We found that the widely applied version of the Mott-Schottky equation can lead to significant errors. Even though we deal with strong barrier pinning and in the absence of deep level, we show that the Mott-Schottky equation can lead to huge errors due to voltage splitting at double Schottky barriers. Experiments carried out on doped tin oxide varistors corroborate the main trends of our modeling.