INVESTIGADORES
SCHIPANI federico
congresos y reuniones científicas
Título:
Schottky barriers measurements through Arrhenius plots in gas sensors based on semiconductor films
Autor/es:
F. SCHIPANI, M. A. PONCE, C. M. ALDAO
Lugar:
Mar del Plata
Reunión:
Encuentro; 4to JIM (Encuentro de Jóvenes Investigadores en Ciencia de Materiales); 2012
Institución organizadora:
Asociación Argentina de Materiales (SAM), la Facultad de Ingeniería de Mar del Plata y el Instituto de Investigaciones en Ciencia y Tecnología de Materiales (INTEMA)
Resumen:
The capacitive behavior of an intergranular double Schottky barrier in a polycrystalline semiconductor is evaluated. We found that the widely applied version of the Mott-Schottky equation can lead to significant errors. Even though we deal with strong barrier pinning and in the absence of deep level, we show that the Mott-Schottky equation can lead to huge errors due to voltage splitting at double Schottky barriers. Experiments carried out on doped tin oxide varistors corroborate the main trends of our modeling.
