IFLP   13074
INSTITUTO DE FISICA LA PLATA
Unidad Ejecutora - UE
artículos
Título:
Electronic structure of spontaneously strained graphene on hexagonal boron nitride
Autor/es:
PABLO SAN-JOSE; A. GUTIÉRREZ-RUBIO; MAURICIO STURLA; FRANCISCO GUINEA
Revista:
PHYSICAL REVIEW B
Editorial:
AMER PHYSICAL SOC
Referencias:
Lugar: New York; Año: 2014
ISSN:
1098-0121
Resumen:
Hexagonal boron nitride substrates have been shown to dramatically
improve the electric properties of graphene. Recently, it has been
observed that when the two honeycomb crystals are close to perfect
alignment, strong lattice distortions develop in graphene due to the
moiré adhesion landscape. Simultaneously, a gap opens at the Dirac
point. Here, we derive a simple low-energy electronic model for graphene
aligned with the substrate, taking into account spontaneous strains at
equilibrium and pseudogauge fields. We carry out a detailed
characterization of the modified band structure, gap, local and global
density of states, and band topology in terms of physical parameters. We
show that the overall electronic structure is strongly modified by the
spontaneous strains