Electrical response analysis of doped tin oxide gas sensors under different gases atmospheres

L. FRAIGI, E. MANGANO, M.A. PONCE, C. M. ALDAO, C. MALAGU, M.C. CAROTTA, G. MARTINELLI

Conferencia; 11th International Conference on Advanced Materials; 2009

SBPMAT

  Semiconductor gas sensors based on tin oxide have been widely accepted for detecting and monitoring oxidizing or reducing gases. The electrical resistance of TixSn1-xO2 sensors under diferent atmospheres was analyzed.  Possible mechanisms responsible for the found responses, under different gases conditions, are proposed (1-4).  The influence of temperature on the oxygen diffusion into the grains annihilating oxygen vacancies was studied. To fit the experimental results, a simple circuit model that considers a capacitance and a resistance in parallel was employed.  An explanation for the resistance variation considering spherical grains with different characteristics is proposed.