Fabrication of solid state nanopores in robust silicon wafer

M.VEGA; P. GRANELL; F. GOLMAR; M.J. DIEGUEZ; C. LASORSA; B. LERNER; M.S. PEREZ

Salamanca

Workshop; Nanociencia y Nanotecnología Analitica; 2015

In this research an easy, reproducible and inexpensive technique for the production of solid state nanopores, using silicon wafer substrate is proposed. The method uses an automatic braking pore formation, without the intervention of an external agent, when this has dimensions of around 20 nm to 200 µm. The manufacturing method is based on the chemical braking of etching in silicon wafers for produce solid state nanopores. Nanopores were manufactured using a Potassium hydroxide (KOH) etching and subsequently a chemical braking was performed with Hydrochloric acid (HCl), in order to automatically control the nanopore opening. The technique is based on pore control formation, by neutralization etchant (KOH) with a strong acid. Thus, a local neutralization is produced around the nanopore, which stops the silicon etching.