Monte Carlo modeling for roughening of Si(100) steps during homoepitaxial growth

MIRABELLA, D A; WILLIAMS, F J; ALDAO, C M

PHYSICAL REVIEW B

AMER PHYSICAL SOC

Año: 1999 vol. 59 p. 9850 - 9853

1098-0121

The kinetic roughening of steps during homoepitaxial growth on vicinal Si􏰷100􏰸 has been modeled using a Monte Carlo approach. Comparisons with scanning tunneling microscopy measurements are presented. Growth exponents for the evolution of the step roughness for models and experiments are discussed.