Dimer chain patterns during submonolayer growth of silicon on Si(100)

J.L. IGUAIN, H.O. MÁRTIN, C.M. ALDAO, Y. GONG, S.J. CHEY, Y J.H. WEAVER

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A - VACUUM SURFACES AND FILMS

Año: 1998 vol. 16 p. 3460 - 3463

0734-2101

Dimer chains formed during deposition of Si on Si(100)-2x1 at ~435 K have been analyzed using scanning tunneling microscopy. Results are compared with the outcome of Monte Carlosimulations. The size distributions obtained from experiments and the model give new insight into the basic mechanisms responsible for dimer chain formation. For the Monte Carlo simulations, activation energies for adatom diffusion of 0.7 and 0.5 eV, parallel and perpendicular to dimer row directions, gave the best agreement with experimental results.