INVESTIGADORES
ALDAO celso Manuel
artículos
Título:
Monte Carlo modeling for roughening of Si(100) steps during homoepitaxial growth
Autor/es:
D.A. MIRABELLA, F.J. WILLIAMS, Y C.M. ALDAO
Revista:
PHYSICAL REVIEW B - CONDENSED MATTER AND MATERIALS PHYSICS
Referencias:
Año: 1999 vol. 59 p. 9850 - 9853
ISSN:
0163-1829
Resumen:
The kinetic roughening of steps during homoepitaxial growth on vicinal Si(100) has been modeled using a Monte Carlo approach. Comparisons with scanning tunneling microscopy measurements are presented. Growth exponents for the evolution of the step roughness for models and experiments are discussed.
