Monte Carlo modeling of Si(100) roughening due to adsorbate-adsorbate repulsion

C.M. ALDAO; S.E. GUIDONI; G.J. XU; K. NAKAYAMA; J.H. WEAVER

SURFACE SCIENCE

Año: 2004 vol. 551 p. 143 - 149

0039-6028

The pits and Si regrowth islands that form during the roughening of Si(100) by Cl at 700 K have characteristic patterns that depend on the amount of adsorbed Cl, suggesting that adsorbate-adsorbate interactions might be dominant.  Monte Carlo simulations of roughening focused on those interactions.  While the resulting morphology resembles those observed at intermediate coverage, the inability of the simulations to reproduce the experiment results at low coverage indicates that other interactions must be considered, including strain anisotropies that would favor the formation of large features.