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artículos
Título:
Reversible Temperature-Dependent Fermi Level Movement for Metal-GaAs(110) Interfaces
Autor/es:
I.M. VITOMIROV; G.D. WADDILL; C.M. ALDAO; S.G. ANDERSON; C. CAPASSO; J.H. WEAVER
Revista:
PHYSICAL REVIEW B - CONDENSED MATTER AND MATERIALS PHYSICS
Editorial:
APS
Referencias:
Año: 1989 vol. 40 p. 3483 - 3486
ISSN:
0163-1829
Resumen:
This paper describes how temperature regulates the movement of the surface Fermi level for
lightly doped GaAs(110) onto which submonolayer amounts of Ti and Ag have been deposited.
Synchrotron radiation photoemission spectra show that EF can be moved from near the band
edges to ?600 meV into the gap for p- and n-type GaAs by changing temperature from 20 to
300 K. Band bending changes are shown to be reversible when there are no morphology changes
(Ti), but are not completely reversible when clustering occurs during the thermal cycle (Ag).
These results demonstrate that the existence of gap states is not sufficient in itself to induce full
band bending because charge exchange with those states is needed. They are discussed in the
context of our dynamic-coupling model which shows how surface-bulk coupling is controlled by
the bulk dopant concentration and temperature.