Deposition of Ag Ions and Neutrals on ZnSe(100) : Influence of Interface Morphology on Schottky Barrier Formation

M. VOS; C.M. ALDAO; D.J.W. AASTUEN; J.H. WEAVER

PHYSICAL REVIEW B - CONDENSED MATTER AND MATERIALS PHYSICS

APS

Año: 1990 vol. 41 p. 991 - 994

0163-1829

Ag overlayers were grown on ZnSe{100) by thermal evaporation and by a new approach using partially ionized beams. For the latter, -4% of the atoms were ionized and accelerated to an energy of 300-400 eV, thus making it possible to vary the amount of surface disruption. Interface evolution was monitored with photoemission and low-energy electron diffraction. No disruption of the ZnSe surface was found for thermal evaporation, and three-dimensional growth was observed. For ion deposition, three-dimensional growth was again observed, but there was clear evidence of substrate disruption. Parallel measurements of band-bending changes show that the barrier height is the same to within 100 meV for neutral-atom and ion deposition, despite differences in interface morphology.