Photovoltaic Effects in Temperature-Dependent Fermi Level Movement for GaAs(110)

C.M. ALDAO; G.D. WADDILL; P.J. BENNING; C. CAPASSO; J.H. WEAVER

PHYSICAL REVIEW B - CONDENSED MATTER AND MATERIALS PHYSICS

APS

Año: 1990 vol. 41 p. 6092 - 6095

0163-1829

This paper describes how illumination influences the measured band bending when different amounts of Ti and Bi are deposited on n type-and p-type GaAs(110) with different dopant concentrations for temperatures 20» T» 300 K. Synchrotron radiation photoemission results show that photon fluxes used routinely in Schottky-barrier formation studies induce measurable photovoltages. These photovoltages depend on the amount of band bending, the type of doping, the dopant concentration, and the metal overlayer. These photovoltages contribute a nonequilibrium component of band bending, especially at low temperature.