Calculated Photocurrents and Surface Barrier Heights

C.M. ALDAO; A. PALERMO; J.H. WEAVER

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A - VACUUM SURFACES AND FILMS

A V S AMER INST PHYSICS

Año: 1992 vol. 10 p. 493 - 496

0734-2101

This article solves the equations that dictate band flattening due to photo-induced electron-hole pair generation in the depletion region of a semiconductor. The calculations show the influence of the barrier height, the optical properties of the substrate, and the minority carrier properties. The calculations are compared to typical temperature-dependent photoemission results obtained after 10 A of Ge were deposited onto p-GaAs ( 110). The results show significant band flattening when a lightly doped sample is brightly illuminated, even at room temperature.