Step Dynamics and Equilibrium Structure of Monoatomic Steps on Si(100)-2x1

J.R. SÁNCHEZ; C.M. ALDAO

PHYSICAL REVIEW B - CONDENSED MATTER AND MATERIALS PHYSICS

APS

Año: 1996 vol. 54 p. 11058 - 11061

0163-1829

Monte Carlo simulations of the dynamics for a B-type step on the Si~100!-231 surface are reported. The equilibrium structure of the step is considered to be the result of attachment and detachment processes. Nearest-neighbor interaction energies are considered for detachment from steps and a simple relaxation mechanism is used for attachment. This simple model makes it possible to gain insight into the effects of the relaxation process inherent to the system under study. We show that this mechanism plays a crucial role in determining the equilibrium patterns found in Si~100! steps and that effective interaction energies cannot be determined from the frozen low-temperature step profile without taking the dynamics processes into account appropriately.