INVESTIGADORES
ALDAO celso Manuel
artículos
Título:
A Steady-state approach to determine diffusion coefficients: the migration of silicon on the Si(100) surface
Autor/es:
C.M. ALDAO; J.L. IGUAIN; H.O. MÁRTIN
Revista:
SURFACE SCIENCE
Editorial:
ELSEVIER SCIENCE BV
Referencias:
Lugar: Amsterdam; Año: 1996 vol. 366 p. 483 - 490
ISSN:
0039-6028
Resumen:
We introduce a steady-state method to analytically determine diffusion coefficients for a particle in a strip with multiple inequivalent adsorption sites in the unit cell. This approach is applied to a variety of models showing its simplicity and usefulness. In particular, the diffusion coefficient of a Si adatom on the Si(100) for a model based on the Stillinger-Weber potential is computed. Comparisons with stochastic kinetic simulations are presented.
