III-V heterostructures, microoscillators and solar cells: An overview of the argentinian MBE facility

ALARCÓN, LEONARDO SALAZAR

Vitoria

Encuentro; QMES; 2024

UFES, FAPES, CAPES

Molecular beam epitaxy (MBE) is an advaced technique for the controlled growth of multilayer thin films.We use a III-V MBE facility installed in Bariloche with the main objective of develop specific Quantum Cascade Laser (QCL) devices, but the efforts invested on this target opened the door for new opportunities to expand our capacities and develop other project lines. Understanding III-V materials allow us to control both electronic and optical porperties of semiconductors to get the best of each world for applications in different fields with remarcable posibilities to do functionalization in each layer. In this talk I will present an overview of the MBE technique and show results on multiple devices based on GaAs, AlGaAs InGaAs and AlGaAs heterostructures. Specifically we decided to build GaAs micro oscillators taking advantage of our earlier expertise in Sillicon MEMS and get information from linear and non linear mechanical effects, solar cells builded and procesed locally for satelite porpuses, bragg mirrors, optical cavities and devices for fundamental phisics as quantum Wells and Superconductive Junctions, etc. Because our proximity with the ¨nano¨ thematic for example we test heterostructures and optical active nanoparticles getting luminescent intensification. The main challenge was to learn from scratch and show that is posible to have semiconductor facilities operanting in Argentina. We think the first steps in this journey are showing promising results.