Bariloche III-V Facilities present and perspectives

ALARCÓN, LEONARDO SALAZAR

Regensburg

Exposición; Seminar; 2023

Universität Regensburg

Molecular beam epitaxy (MBE) is an advaced technique for the controlled growth of multilayer thin films.We use a III-V MBE facility installed in Bariloche with the main objective of develop specific Quantum Cascade Laser (QCL) devices, but the efforts invested on this target opened the door for new opportunities to expand our capacities and develop other project lines. Understanding III-V materials allow us to control both electronic and optical porperties of semiconductors to get the best of each world for applications in different fields with remarcable posibilities to do functionalization in each layer. In this talk I will present an overview of the MBE technique and show results on multiple devices based on GaAs, AlGaAs InGaAs and AlGaAs heterostructures. Specifically we decided to build GaAs micro oscillators taking advantage of our earlier expertise in Sillicon MEMS and get information from linear and non linear mechanical effects, solar cells builded and procesed locally for satelite porpuses, bragg mirrors, optical cavities and devices for fundamental phisics as quantum Wells and Superconductive Junctions, etc.