Switching effect properties on Sn-doped Sb70Te30 thin films

J. A. ROCCA; M. A. UREÑA; V. BILOVOL; FONTANA, M.

Chisinau

Congreso; 9th International Conference on Amorphous and Nanostructured Chalcogenides; 2019

International Conference on Amorphous and Nanostructured Chalcogenides

Ge-Sb-Tephase-change materials in compositions close to Ge2Sb2Te5and doped with Sn have been proposed to improve performance ofphase-change memories (PCM) [1]. In a previous work we found thatSb70Te30thin films show a sharp fall in the electrical resistance in a narrowtemperature range when heating [2]. Thus, in this work we studied theeffect of the addition of tin to this composition.Undopedand tin doped thin films (Snx[Sb0.70Te0.30]100-x,with x = 0, 2.5, 5 and 7.5 at. %) were obtained by pulsed laserdeposition (PLD) using a Nd:YAG laser (λ = 355 nm). Their electricalresistance was measured in a two-probes configuration while heatingfrom room temperature to 650 K, at rates below 5 K/min. A sharp fallin the electrical resistance is detected within a narrow temperaturerange in all the samples. Both as-obtained and thermally-treatedfilms were structurally characterized by X-ray diffraction (XRD)using Kα(Cu) radiation and Mössbauer spectroscopy. Wecompare results for these compositions in terms of identifiedcrystallization products, transformation onset temperatures,transformation temperature ranges and amorphous/crystallizedelectrical resistance ratio.h2.acsi-title-western { margin-top: 0cm; margin-bottom: 0cm; font-family: "Times New Roman", serif; font-size: 12pt; font-style: normal; text-align: center }h2.acsi-title-cjk { margin-top: 0cm; margin-bottom: 0cm; font-size: 12pt; font-style: normal; text-align: center }h2.acsi-title-ctl { margin-top: 0cm; margin-bottom: 0cm; font-size: 10pt; font-style: normal; font-weight: normal; text-align: center }h2 { margin-bottom: 0.11cm; direction: ltr; text-align: left; orphans: 2; widows: 2; background: transparent; page-break-after: avoid }h2.western { font-family: "Cambria", serif; font-size: 14pt; so-language: en-US; font-style: italic; font-weight: bold }h2.cjk { font-size: 14pt; so-language: en-US; font-style: italic; font-weight: bold }h2.ctl { font-size: 14pt; font-style: italic; font-weight: bold }p { margin-bottom: 0.25cm; direction: ltr; line-height: 115%; text-align: left; orphans: 2; widows: 2; background: transparent }p.western { font-size: 12pt; so-language: en-US }p.cjk { font-size: 12pt; so-language: en-US }p.ctl { font-size: 12pt }p { margin-bottom: 0.25cm; direction: ltr; line-height: 115%; text-align: left; orphans: 2; widows: 2; background: transparent }p.western { font-size: 12pt; so-language: en-US }p.cjk { font-size: 12pt; so-language: en-US }p.ctl { font-size: 12pt }