Enhancement of optical absorption in multiferroic 0.5PZT-0.5PFN thin films: Experiments and first-principles analysis

IMHOFF, L.; DI MARCO, M.B.; LAVADO, C.; BAROLIN, S.; STACHIOTTI, M.G.

JOURNAL OF ALLOYS AND COMPOUNDS

ELSEVIER SCIENCE SA

Año: 2024 vol. 977

0925-8388

Multiferroic compounds have gained research attention in the field of ferroelectric photovoltaics due to the presence of transition-metal d states from magnetic ions, which tend to reduce the bandgap value. In this work, 0.5Pb(Zr0.52Ti0.48)O3–0.5Pb(Fe0.5Nb0.5)O3 [PZTFN0.5] thin films were synthesized using a sol-gel route to investigate the effect of iron doping on optical and multiferroic properties. For comparative analysis, the end- member compositions, Pb(Zr0.52Ti0.48)O3 [PZT] and Pb(Fe0.5Nb0.5)O3 [PFN], were also synthesized under identical conditions. Our results revealed that the incorporation of Fe3+ions into the PZT lattice not only induces multiferroic behavior, but also effectively enhances the optical absorption of the material in the visible light region. Optical transitions at ~3.0 eV (~2.4 eV) and ~2.7 eV (~2.2 eV) for the direct (indirect) bandgap were determined for PZTFN0.5 and PFN, respectively, indicating that the absorption edges of the iron-containing films result more promising than PZT (direct Eg~3.6 eV) for photovoltaic applications. Both PZTFN0.5 and PFN thin films exhibit multiferroic behavior at room temperature, with different electric and magnetic properties. While PZTFN0.5 presents saturated hysteresis loops with remanent polarization values around 10 μC/cm2 and magnetization of 1.6 emu/cm2, PFN displays significantly larger remanence (31 emu/cm2) but poorer ferroelectric properties due to the presence of leakage. Microscopic insights into the structural and electronic properties of the PZTFN0.5 solid solution were provided from first-principles calculations.