Combined Monte Carlo and TCAD simulation method for a complete characterization of the effects of ionizing radiation on Silicon detection devices

N. MARTÍN; M. SOFO HARO; M. VALENTE

Simposio; XXII International Symposium on Solid State Dosimetry (ISSSD 2022); 2022

Ionizing radiation detection devices are used in various areas of applied physics. Thus, anaccurate characterization of their operational performance is required and computationalapproaches are commonly used too this aim. These tools are necessary to understand in termsof efficiency, resolution and signal noise the internal process for future optimizations. Thepresent study proposes a combined approach of numerical modeling based on TechnologyComputer Aided Design (TCAD) simulations and stochastic Monte Carlo-based simulationmodels to study the active behavior of silicon sensors, like Si-PIN detectors [1] or new devicesthat require a detailed modelling before fabrication. The impact effects of individual particlescan be realistically evaluated in Monte Carlo simulations that adequately describe the energydeposition along their path. Such information represents the input to TCAD tools foranalyzing the active response of detectors according to bias, particle type, energy and impactdirection. Physical simulation tools such as PENELOPE [2] for ionizing radiation interactionand SENTAURUS-TCAD [3] for charge transport and signal generation were chosen todevelop this combined methodology. The proposed approach has been successfullyimplemented to obtain an integral characterization of the X-123 Si Amptek detector, thusdemonstrating the feasibility and suitability of the proposed methodology.