Design and Simulation of a Highly Sensitive Charge Detector with Nondestructive Readout Mode for Fully Depleted Thick CCDs

SOFO-HARO, MIGUEL; DONLON, KEVAN; BURKE, BARRY; ESTRADA, JUAN; FAHIM, FARAH; LEITZ, CHRIS

IEEE TRANSACTIONS ON ELECTRON DEVICES

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

Lugar: New York; Año: 2023 vol. 70 p. 563 - 569

0018-9383

Several applications with charge-coupled devices (CCDs) and Skipper-CCDs can be significantly improved with an enhancement in pixel readout speed. In this work, we present the design and TCAD modeling of a highly sensitive double-gate MOSFET for charge amplification in CCD detectors. The design steps followed to integrate the device into high-voltage fully-depleted thick CCDs are described. Like Skipper-CCDs, the device allows for nondestructive readout of the charge packet for noise reduction. The simulations predict a sensitivity of 2.5 nA/e- and a readout noise of 2.4 erms-/pix at a readout speed of 300 kpixels/s. In a multisampling operation, a readout noise of 0.1 erms-/pix can also be achieved at a readout speed in the order of 700 pixels/s, approximately seven times faster than the Skipper-CCD at that same readout noise level.