PERSONAL DE APOYO
D'ELIA Raul Luis
artículos
Título:
Structural quality in single crystalline CdSe ingots grown by PVT
Autor/es:
D'ELÍA RAÚL LUIS; AGUIRRE M.; DI STEFANO M.C.; HEREDIA EDUARDO; MARTINEZ ANA; CANEPA H.; NUÑEZ GARCIA J.; TRIGUBO ALICIA
Revista:
REVISTA MATéRIA
Editorial:
UNIV FED RIO DE JANEIRO
Referencias:
Lugar: Rio de Janeiro; Año: 2020 vol. 25
ISSN:
1517-7076
Resumen:
CdSe is II-VI semiconductor with compact hexagonal structure. It has a band gap of 1.82 eV and a high stopping power for nuclear radiation. Single crystalline CdSe ingots were grown by Physical Vapor Transport (PVT) employing a horizontal reactor. As devices critically depend on material properties its single crystalline quality was determined by chemical etching and transmission electron microscopy. Results were compared to those corresponding to Bridgman High Pressure (HPB) grown material and also to PVT material grown in a vertical reactor.
