INVESTIGADORES
OLMOS ASAR Jimena Anahi
artículos
Título:
Band gap tuning of layered III-Te materials
Autor/es:
OLMOS-ASAR, JIMENA ANAHÍ; ROCHA LEÃO, CEDRIC; FAZZIO, ADALBERTO
Revista:
JOURNAL OF APPLIED PHYSICS
Editorial:
AMER INST PHYSICS
Referencias:
Lugar: New York; Año: 2018 vol. 124 p. 45104 - 45104
ISSN:
0021-8979
Resumen:
Gallium telluride is a layered material with high photoresponse and is very promising for applications in optoelectronic devices such as photovoltaic cells or radiation detectors. We analyze how the properties of thin films of this material scale with its thickness and also study two other proposed materials with the same crystalline structure whose room-temperature stability we verify. We show that electronic band gaps up to 2.16 eV can be obtained by stacking up and/or applying perpendicular electric field to these III-Te monolayers. This form of band gap engineering may be promising for several technological applications.
