Low Noise Design of a CMOS Gilbert Mixer Cell in 700 MHz

G. O. BARRAZA WOLF; F. H. GREGORIO,; J. E. COUSSEAU

Cordoba

Congreso; XVI Reunion de Trabajo en Procesamiento de la Informacion y Control; 2015

Universidad Nacional de Córdoba, UTN Facultad Regional Córdoba

A design of a MOS Gilbert mixer cell intended for LTE band 28 is presented in this work. The objective is directed to a design with low noise and low third-order intermodulation distortion. The designed mixer can be used in a fully-dierential chain, avoiding the implementation of a balun.Since the overall IP3 of a full front-end depends on the IP3 of the each stage, specially those behind the low-noise amplier (LNA), it is mandatory to have a properly designed mixer. In this design a CMOS 0.18 um process is employed. The proposed scheme allows to obtain the following characteristic parameters: an IIP3 of 8.69 dBm, a 1dB-compression point of -1.28 dBm, a noise figure of 8.2 dB and draw 30 mA from a 3.3 V power supply.