BaTiO3 thin films on platinized silicon: growth, characterization and resistive memory behavior

AUGUSTO ROMÁN; MIGUEL RENGIFO; LEILA SALEH MEDINA; MARIEL REYNOSO; MARTÍN NEGRI; LAURA STEREN; DIEGO RUBI

THIN SOLID FILMS

ELSEVIER SCIENCE SA

Lugar: Amsterdam; Año: 2017

0040-6090

We report on the behavior of Ti/BaTiO3/Pt memristive devices. The BaTiO3 layer was grown on platinized silicon by pulsed laser deposition with different laser pulse energies. The performed characterization shows a correlation between the fabrication conditions and the microstructure and stoichiomnetry of the films. It is suggested that the small grain size of the BaTiO3 films destabilize the tetragonal distortion and inhibits the appearance of long-range ferroelectric ordering. We show that even in absence of ferroelectric resistive switching (RS), two different RS mechanisms (metallic filament formation and oxidation/reduction of the Ti top electrode) compete, and can be selected by controlling the films growth conditions.