Inverse spin-valve type magnetoresistance in spin engineered multilayered structures.

JEAN MARIE GEORGE; L.G. PEREIRA ; A. BARTHELEMY ; F. PETROFF; L. STEREN; J.L. DUVAIL ; A. FERT ; R. LOLOEE ; P. HOLODY ; P. A. SCHROEDER

PHYSICAL REVIEW LETTERS

AMER PHYSICAL SOC

Año: 1994 vol. 72 p. 408 - 411

0031-9007

The resistivity of magnetic multilayers is generally smaller when the magnetizations of successive layers are parallel, which is the so-called giant magnetoresistance or spin-valve effect. We have been able to reverse this effect and to obtain a smaller resistivity for an antiparallel arrangement by intercalating thin Cr layers within half of the Fe layers in Fe/Cu multilayers. This inverse spin-valve effect is due to the inverse spin asymmetries of the electron scattering in successive Fe layers with and without Cr. This is a confirmation of the fundamental mechanism of the giant magnetoresistance.