Evidence for molecular N2 bubble formation in a (Ga,Fe)N magnetic semiconductor

A. KOVÁCS; B. SCHAFFER; M.S. MORENO; T. KASAMA; A.J. CRAVEN ; R.E. DUNIN-BORKOWSKI

Congreso; Germany Microscopy Conference 2011; 2011

Fe-doped GaN semiconductors are of interest for combining the properties of semiconductors and magnetic materials. Depending on the growth temperature used, Fe can either be distributed homogenously in the GaN host lattice or it can accumulate in the form of Fe-N nanocrystals. As a result of the small size of the nanocrystals and the sensitivity of Fe-doped GaN to specimen preparation for electron microscopy, the formation and physical properties of Fe-N nanocrystals in GaN are not yet fully understood.