INVESTIGADORES
MORENO Mario Sergio Jesus
artículos
Título:
Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film Si solar cells
Autor/es:
M. DUCHAMP; C.B. BOOTHROYD; M.S. MORENO; B.B. VAN AKEN; W.J.SOPPE; R.E. DUNIN-BORKOWSKI
Revista:
JOURNAL OF APPLIED PHYSICS
Editorial:
AMER INST PHYSICS
Referencias:
Lugar: New York; Año: 2013 vol. 113 p. 935131 - 935138
ISSN:
0021-8979
Resumen:
Electron energy-loss spectroscopy (EELS) is used to study p-doped layers in n-i-p amorphous thin film Si solar cells grown on steel foil substrates. For a solar cell in which an intrinsic amorphous hydrogenated Si (a-Si-H) layer is sandwiched between 10-nm-thick n-doped and p-doped a-Si:H layers, we assess whether core-loss EELS can be used to quantify the B concentration. We compare the shape of the measured B K edge with real space ab initio multiple scattering calculations and show that it is possible to separate the weak B K edge peak from the much stronger Si L edge fine structure by using log-normal fitting functions. The measured B concentration is compared with values obtained from secondary ion mass spectrometry, as well as with EELS results obtained from test samples that contain 200-nm-thick a-Si:H layers co-doped with B and C. We also assess whether changes in volume plasmon energy can be related to the B concentration and/or to thedensity of the material and whether variations of the volume plasmon line-width can be correlated with differences in the scattering of valence electrons in differently doped a-Si:H layers.