Growth and characterisation of Al1-xGaxAs layers

G. ATTOLINI; M. BOSI; C. FERRARI; M. BARRERA; J. PLÁ; C. PELOSI

Bratislava-Eslovaquia

Workshop; 12th European Workshop on Metalorganic Vapour Phase Epitaxy; 2007

AlxGa1-xAs layers with x varying from 0.6 to 0.9 were deposited on GaAs substrate at 600ºC by means of metalorganic vapour phase epitaxy (MOVPE) using AsH3, trimethyl gallium and trimethyl aluminum as precursors diluted in H2 as carrier gas. Atomic Force Microscopy (AFM) technique was used to investigate sample surface, while High Resolution X-Ray Diffraction (HRXDR), coupled to numerical simulation analysis, was used to investigate the structural quality and to calculate the sample thickness. Optical reflectance spectra in 300-900 nm region were obtained and compared to theoretical simulations in order to assess the thickness with an independent technique.