Positron lifetime measurements on neutron-irradiated InP crystals

F.J.NAVARRO; L. C. DAMONTE; B.MARÍ; J.L.FERRERO

JOURNAL OF APPLIED PHYSICS

American Institute of Physics

Lugar: N.Y.; Año: 1996 vol. 79 p. 9043 - 9046

0021-8979

Neutron-irradiated InP single crystals have been investigated by positron-lifetime measurements. The samples were irradiated with thermal neutrons at different fluences yielding concentrations for Sn-transmuted atoms between 231015 and 231018 cm23. The lifetime spectra have been analyzed into one exponential decay component. The mean lifetimes show a monotonous increase with the irradiation dose from 246 to 282 ps. The increase in the lifetime has been associated to a defect containing an Indium vacancy. Thermal annealing at 550 °C reduces the lifetime until values closed to those obtained for the as-grown and conventionally doped InP crystals. into one exponential decay component. The mean lifetimes show a monotonous increase with the irradiation dose from 246 to 282 ps. The increase in the lifetime has been associated to a defect containing an Indium vacancy. Thermal annealing at 550 °C reduces the lifetime until values closed to those obtained for the as-grown and conventionally doped InP crystals. into one exponential decay component. The mean lifetimes show a monotonous increase with the irradiation dose from 246 to 282 ps. The increase in the lifetime has been associated to a defect containing an Indium vacancy. Thermal annealing at 550 °C reduces the lifetime until values closed to those obtained for the as-grown and conventionally doped InP crystals. into one exponential decay component. The mean lifetimes show a monotonous increase with the irradiation dose from 246 to 282 ps. The increase in the lifetime has been associated to a defect containing an Indium vacancy. Thermal annealing at 550 °C reduces the lifetime until values closed to those obtained for the as-grown and conventionally doped InP crystals. 31015 and 231018 cm23. The lifetime spectra have been analyzed into one exponential decay component. The mean lifetimes show a monotonous increase with the irradiation dose from 246 to 282 ps. The increase in the lifetime has been associated to a defect containing an Indium vacancy. Thermal annealing at 550 °C reduces the lifetime until values closed to those obtained for the as-grown and conventionally doped InP crystals.