“ZnO Doping By Ion Implantation”

M.HERNÁNDEZ FENOLLOSA; E.RITA; L.C.DAMONTE

SPIE

SPIE-SOC PHOTOPTICAL INSTRUMENTATION ENGINEERS

Año: 2005 vol. 5922 p. 178 - 183

0277-786X

Preliminary studies on ZnO single crystals implanted with In (donor), As (acceptor) and 111Ag (acceptor) are presented. Each dopants electronic structure was investigated by means of positron annihilation lifetime (PALS) and photoluminescence (PL) measurements. For some of the crystals, the lifetime spectra revealed the presence of effective positron traps. Moreover, for all samples the luminescence spectra consist of a near-band-edge (NBE) and a deep-level (DL) emission. The observed trends will be discussed in terms of the origin, nature and charge state of the induced defects involved.